2N743 Datasheet (Motorola) - NPN silicon annular transistor

2N743, NPN silicon annular transistor

2N743 (SILICON) NPN silicon annular transistor designed for highspeed, low-current, saturated switching operations.

CASE 22 (TO-IS) Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TA =25° C Derate above 25° C Operating and Storage Junction Temperature Range VCEO VCB VEB IC PD TJ , Tstg 12 20 5.0 200 300 1.71 -65 to +200 Vdc Vdc Vdc mAdc mW m