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ACS03MS
January 1996
Radiation Hardened Quad 2-Input NAND Gate with Open Drain
Features
Pinouts
• Devices QML Qualified in Accordance with MIL-PRF-38535
• Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300K RAD (Si) • Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day
(Typ) • SEU LET Threshold . . . . . . . . . . . . . . . . . . . . . . . >100 MEV-cm2/mg • Dose Rate Upset . . . . . . . . . . . . . . . . >1011 RAD (Si)/s, 20ns Pulse • Dose Rate Survivability . . . . . . . . . . . >1012 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions • Military Temperature Range . . . . . . . . . . . . . . . .