FSS913A0D 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs

Intersil Corporation

Description

FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The D.

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Datasheet Specifications

Part number: FSS913A0D
Manufacturer: Intersil Corporation
File Size: 56.38 KB
Datasheet: FSS913A0D_IntersilCorporation.pdf
Description: 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs

Features

* 10A, -100V, rDS(ON) = 0.280Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose R

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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FSS913A0D 10A -100V 0.280 Ohm Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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