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FSS913A0D - 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs

Intersil Corporation

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Datasheet Details

Part number	FSS913A0D
Manufacturer	Intersil Corporation
File Size	56.38 KB
Description	10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
Datasheet	FSS913A0D_IntersilCorporation.pdf

FSS913A0D Product details

Features

10A, -100V, rDS(ON) = 0.280Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 1.5nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Sp.

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Published: Mar 23, 2005 |