Datasheet4U Logo Datasheet4U.com

FSS913A0R Datasheet - Intersil Corporation

FSS913A0R 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs

FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are .

FSS913A0R Features

* 10A, -100V, rDS(ON) = 0.280Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose R

FSS913A0R_IntersilCorporation.pdf

Preview of FSS913A0R PDF
FSS913A0R Datasheet Preview Page 2 FSS913A0R Datasheet Preview Page 3

Datasheet Details

Part number:

FSS913A0R

Manufacturer:

Intersil Corporation

File Size:

56.38 KB

Description:

10a/ -100v/ 0.280 ohm/ radiation hardened/ segr resistant/ p-channel power mosfets.

📁 Related Datasheet

FSS913A0D 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs (Intersil Corporation)

FSS9130D P-Channel Power MOSFET (Intersil Corporation)

FSS9130R P-Channel Power MOSFETs (Intersil Corporation)

FSS9230D P-Channel Power MOSFETs (Intersil Corporation)

FSS9230R P-Channel Power MOSFETs (Intersil Corporation)

FSS923A0D P-Channel Power MOSFETs (Intersil Corporation)

FSS923A0R P-Channel Power MOSFETs (Intersil Corporation)

FSS101 P-Channel Silicon MOSFET (Sanyo Semicon Device)

TAGS

FSS913A0R FSS913A0R 10A -100V 0.280 Ohm Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

FSS913A0R Distributor