* 10A, -100V, rDS(ON) = 0.280Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose R
FSS913A0R Datasheet (56.38 KB)
FSS913A0R
Intersil Corporation
56.38 KB
10a/ -100v/ 0.280 ohm/ radiation hardened/ segr resistant/ p-channel power mosfets.
FSS913A0D, FSS913A0R
Data Sheet June 1999 File Number
4451.3
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
The D.
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Load S/W Applicatio.
