FSTJ9055D1 Datasheet - Intersil Corporation

FSTJ9055D1 Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSTJ9055D, FSTJ9055R TM Data Sheet June 2000 File Number 4756.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessar.

FSTJ9055D1 Features

* 62A, -60V, rDS(ON) = 0.023Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Ra

FSTJ9055D1 Datasheet (72.60 KB)

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Datasheet Details

Part number:

FSTJ9055D1

Manufacturer:

Intersil Corporation

File Size:

72.60 KB

Description:

Radiation hardened/ segr resistant p-channel power mosfets.

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