* 62A, -60V, rDS(ON) = 0.023Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra
FSTJ9055R Datasheet (72.60 KB)
FSTJ9055R
Intersil Corporation
72.60 KB
Radiation hardened/ segr resistant p-channel power mosfets.
FSTJ9055D, FSTJ9055R
TM
Data Sheet
June 2000
File Number
4756.1
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
The Discrete Products .
📁 Related Datasheet
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Preliminary
FSTU16211 24-Bit Bus Switch with −2V Undershoot Protection (Preliminary)
May 2001 Revised May 2001
FSTU16211 24-Bit Bus Switch with −2V.
FST100100 - SCHOTTKY DIODE
(TRANSYS)
Transys
Electronics
L I M I T E D
FST10020 THRU FST100100
SCHOTTKY DIODES MODULE TYPE 100A
Features
High Surge Capability
Types Up to 100V VRRM
1.
FST100100 - SCHOTTKY DIODE MODULE
(DACO)
FST10080 THRU
FST100100
SCHOTTKY DIODE MODULE TYPES 100A
Features
High Surge Capability Types Up to 100V VRRM Isolated to Plate
Maximum Ratings
Opera.
