FSTJ9055R1 Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Intersil Corporation

Description

FSTJ9055D, FSTJ9055R TM Data Sheet June 2000 File Number 4756.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products .

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Datasheet Specifications

Part number: FSTJ9055R1
Manufacturer: Intersil Corporation
File Size: 72.60 KB
Datasheet: FSTJ9055R1_IntersilCorporation.pdf
Description: Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Features

* 62A, -60V, rDS(ON) = 0.023Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra

Applications

* Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacriﬁced. The Intersil portfolio of SEGR resistant

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FSTJ9055R1 Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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