FSYC9055D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Intersil Corporation

Description

FSYC9055D, FSYC9055R July 1999 .
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and m.

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Datasheet Specifications

Part number: FSYC9055D
Manufacturer: Intersil Corporation
File Size: 51.81 KB
Datasheet: FSYC9055D_IntersilCorporation.pdf
Description: Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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FSYC9055D Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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