FSYC9160R Datasheet - Intersil Corporation

FSYC9160R, Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSYC9160D, FSYC9160R July 1998 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs .
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military spac.

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Datasheet Details

Part number:

FSYC9160R

Manufacturer:

Intersil Corporation

File Size:

61.45 KB

Description:

Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Features

* 47A, -100V, rDS(ON) = 0.053Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose R

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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FSYC9160R Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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