Part number:
FSYC9160R
Manufacturer:
Intersil Corporation
File Size:
61.45 KB
Description:
Radiation hardened/ segr resistant p-channel power mosfets.
FSYC9160R_IntersilCorporation.pdf
Datasheet Details
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RA
FSYC9160R Features
* 47A, -100V, rDS(ON) = 0.053Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose R
FSYC9160R_IntersilCorporation.pdf
Datasheet Details
FSYC9160R
Intersil Corporation
61.45 KB
Radiation hardened/ segr resistant p-channel power mosfets.
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