FSYC9160R Datasheet, Mosfets, Intersil Corporation

✔ FSYC9160R Features

47A, -100V, rDS(ON) = 0.053Ω
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immun

✔ FSYC9160R Application

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particula

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FSYC9160R

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Intersil Corporation

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📄 Datasheet

Description:

Radiation hardened/ segr resistant p-channel power mosfets. The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial

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FSYC9160R Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation