FSYC9160D - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Intersil Corporation

FSYC9160D Datasheet Preview — Preview of FSYC9160D PDF

Datasheet Details

Part number	FSYC9160D
Manufacturer	Intersil Corporation
File Size	61.45 KB
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Datasheet	FSYC9160D_IntersilCorporation.pdf

FSYC9160D Product details

Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Features

47A, -100V, rDS(ON) = 0.053Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 10.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD S.

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Published: Mar 23, 2005 |