FSYC9160D Datasheet, Mosfets, Intersil Corporation

FSYC9160D Features

• Mosfets
• 47A, -100V, rDS(ON) = 0.053Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects -

PDF File Details

Part number:

FSYC9160D

Manufacturer:

Intersil Corporation

File Size:

61.45kb

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📄 Datasheet

Description:

Radiation hardened/ segr resistant p-channel power mosfets. The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial

FSYC9160D Application

• Applications Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RA

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FSYC9160D

Intersil Corporation

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