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HGTP1N120BND, HGT1S1N120BNDS
Data Sheet January 2000 File Number 4650.2
5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).
HGTP1N120BND Datasheet
