HGTP1N120BND Datasheet, Igbt, Intersil Corporation

HGTP1N120BND Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type numbe

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Part number:

HGTP1N120BND

Manufacturer:

Intersil Corporation

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75.76kb

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📄 Datasheet

Description:

N-channel igbt.

HGTP1N120BND Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTP1N120BND

Intersil Corporation

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