Part number:
HGTP1N120CN
Manufacturer:
Intersil Corporation
File Size:
77.17 KB
Description:
N-channel igbt.
HGTP1N120CN Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such a
HGTP1N120CN Datasheet (77.17 KB)
Datasheet Details
HGTP1N120CN
Intersil Corporation
77.17 KB
N-channel igbt.
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