* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such a
HGTP1N120CN Datasheet (77.17 KB)
HGTP1N120CN
Intersil Corporation
77.17 KB
N-channel igbt.
HGTD1N120CNS, HGTP1N120CN
Data Sheet January 2000 File Number 4652.2
6.2A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120CNS, and the HGTP1N120CN are.
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