* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high
HGTP1N120CND Datasheet (80.18 KB)
HGTP1N120CND
Intersil Corporation
80.18 KB
N-channel igbt.
HGTP1N120CND, HGT1S1N120CNDS
Data Sheet January 2000 File Number 4651.1
6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The.
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