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HS9-302RH-T - Radiation Hardened CMOS Dual DPST Analog Switch

Datasheet Summary

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • QML Class T, Per MIL-PRF-38535.
  • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si).
  • No Latch-Up, Dielectrically Isolated Device Islands.
  • Pin for Pin Compatible with Intersil HI-302 Series Analog Switches.
  • Analog Signal Range 15V.
  • Low Leakage.
  • . 100nA (Max, Post Rad).
  • Low RON.
  • . 60Ω (Max, Post Rad).
  • Low Operating Power.
  • 100µA (Max, Post Rad) P.

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Datasheet Details

Part number HS9-302RH-T
Manufacturer Intersil Corporation
File Size 26.42 KB
Description Radiation Hardened CMOS Dual DPST Analog Switch
Datasheet download datasheet HS9-302RH-T Datasheet
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Full PDF Text Transcription

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HS-302RH-T Data Sheet July 1999 File Number 4603.1 Radiation Hardened CMOS Dual DPST Analog Switch Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The HS-302RH-T analog switch is a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free operation. Improved total dose hardness is obtained by layout (thin oxide tabs extending to a channel stop) and processing (hardened gate oxide).
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