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HS9-6254RH-Q - Radiation Hardened Ultra High Frequency NPN Transistor Array

Datasheet Summary

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • Electrically Screened to SMD # 5962-97641.
  • QML Qualified per MIL-PRF-38535 Requirements.
  • Radiation Environment - Gamma Dose (γ).
  • . . 3 x 105RAD(Si) - SEL Immune.
  • . . Bonded Wafer Dielectric Isolation.
  • Gain Bandwidth Product (FT).
  • . . . .8GHz (Typ).
  • Current Gain (hFE).
  • . . . . 70 (Typ).
  • Early Voltage (VA).
  • . . . . 50V (Typ).

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Datasheet Details

Part number HS9-6254RH-Q
Manufacturer Intersil Corporation
File Size 31.67 KB
Description Radiation Hardened Ultra High Frequency NPN Transistor Array
Datasheet download datasheet HS9-6254RH-Q Datasheet
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Full PDF Text Transcription

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HS-6254RH Data Sheet August 1999 File Number 4425.2 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. The high FT (8GHz) and low noise figure (3.5dB) of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the five transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility.
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