HUF75344G3 Datasheet - Intersil Corporation

HUF75344G3 N-Channel MOSFET

HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 File Number 4402.7 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. I.

HUF75344G3 Features

* 75A, 55V

* Simulation Models - Temperature Compensated PSPICE® and SABER© Models - Thermal Impedance PSPICE and SABER Models Available on the WEB at: www.Intersil.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334, “Guide

HUF75344G3_IntersilCorporation.pdf