Part number:
JANSR2N7278
Manufacturer:
Intersil Corporation
File Size:
39.50 KB
Description:
4a/ 250v/ 0.700 ohm/ rad hard/ n-channel power mosfet.
JANSR2N7278 Datasheet (39.50 KB)
JANSR2N7278 Datasheet (39.50 KB)
JANSR2N7278
Intersil Corporation
39.50 KB
4a/ 250v/ 0.700 ohm/ rad hard/ n-channel power mosfet.
* 4A, 250V, rDS(ON) = 0.700Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
* Photo Current - 4nA Per-RAD(Si)/s Typically
* Neutron -
📁 Related Datasheet
JANSR2N7272 - 8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET
(Intersil Corporation)
JANSR2N7272
Formerly FRL130R4
June 1998
8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET
Description
The Intersil Corporation,has designed a ser.
JANSR2N7275 - 5A/ 200V/ 0.500 Ohm/ Rad Hard/ N-Channel Power MOSFET
(Intersil Corporation)
JANSR2N7275
Formerly FRL230R4
June 1998
5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET
Description
The Intersil Corporation has designed a ser.
JANSR2N7261 - REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
(International Rectifier)
PD - 90653B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
100Volt, 0.18Ω , MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technol.
JANSR2N7262 - REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
(International Rectifier)
PD - 90672C
IRHF7230 IRHF8230 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7262 ® HEXFET TRANSISTOR JANSH2N7262 [REF:MIL-PRF-19500/601]
N CHANNEL
200V.
JANSR2N7268U - Radiation Hardened Power MOSFET
(International Rectifier)
IRHN7150 (JANSR2N7268U)
Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology
PD-90720G
Features
.
JANSR2N7269U - Radiation Hardened Power MOSFET
(International Rectifier)
IRHN7250 (JANSR2N7269U)
Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology
PD-90679L
Features
.
