JANSR2N7294 Datasheet, Mosfet, Intersil Corporation

JANSR2N7294 Features

• Mosfet
• 23A, 200V, rDS(ON) = 0.115Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typicall

PDF File Details

Part number:

JANSR2N7294

Manufacturer:

Intersil Corporation

File Size:

48.68kb

Download:

📄 Datasheet

Description:

23a/ 200v/ 0.115 ohm/ rad hard/ n-channel power mosfet. The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancemen

TAGS

JANSR2N7294

Intersil Corporation

📁 Related Datasheet

JANSR2N7292 - 25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7292 Formerly FRF150R4 June 1998 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET Description The Intersil Corporation has designed a se.

JANSR2N7261 - REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR (International Rectifier)
PD - 90653B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 100Volt, 0.18Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technol.

JANSR2N7262 - REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR (International Rectifier)
PD - 90672C IRHF7230 IRHF8230 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7262 ® HEXFET TRANSISTOR JANSH2N7262 [REF:MIL-PRF-19500/601] N CHANNEL 200V.

JANSR2N7268U - Radiation Hardened Power MOSFET (International Rectifier)
IRHN7150 (JANSR2N7268U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology PD-90720G Features .

JANSR2N7269U - Radiation Hardened Power MOSFET (International Rectifier)
IRHN7250 (JANSR2N7269U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology PD-90679L Features .

JANSR2N7272 - 8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7272 Formerly FRL130R4 June 1998 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET Description The Intersil Corporation,has designed a ser.

JANSR2N7275 - 5A/ 200V/ 0.500 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7275 Formerly FRL230R4 June 1998 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET Description The Intersil Corporation has designed a ser.

JANSR2N7278 - 4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7278 Formerly FRL234R4 June 1998 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Description The Intersil Corporation has designed a ser.

JANSR2N7281 - Radiation Hardened/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7281 Formerly FRL430R4 Data Sheet November 1998 File Number 4294 Radiation Hardened, N-Channel Power MOSFET The Intersil has designed a se.

JANSR2N7389 - TRANSISTOR P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-6.5A) (International Rectifier)
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.882A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHF9130 JA.