JANSR2N7390U Datasheet - International Rectifier

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JANSR2N7390U RADIATION HARDENED POWER MOSFET

PD-91804F IRHE9230 JANSR2N7390U RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) 200V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard HEXFET TECHNO.
IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications.

JANSR2N7390U-InternationalRectifier.pdf

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Datasheet Details

Part number:

JANSR2N7390U

Manufacturer:

International Rectifier

File Size:

343.26 KB

Description:

RADIATION HARDENED POWER MOSFET

Features

* Single Event E

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC

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JANSR2N7390U RADIATION HARDENED POWER MOSFET International Rectifier

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