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JANSR2N7398 Datasheet - Intersil Corporation

2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET

JANSR2N7398 Features

* 2A, 500V, rDS(ON) = 2.50Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Rate

JANSR2N7398 General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined.

JANSR2N7398 Datasheet (45.05 KB)

Preview of JANSR2N7398 PDF

Datasheet Details

Part number:

JANSR2N7398

Manufacturer:

Intersil Corporation

File Size:

45.05 KB

Description:

2a/ 500v/ 2.50 ohm/ rad hard/ n-channel power mosfet.

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JANSR2N7398 500V 2.50 Ohm Rad Hard N-Channel Power MOSFET Intersil Corporation

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