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JANSR2N7398 2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET

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Description

JANSR2N7398 Formerly FSL430R4 June 1998 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.

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Datasheet Specifications

Part number
JANSR2N7398
Manufacturer
Intersil Corporation
File Size
45.05 KB
Datasheet
JANSR2N7398_IntersilCorporation.pdf
Description
2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET

Features

* 2A, 500V, rDS(ON) = 2.50Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rate

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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