JANSR2N7399 - 11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET

Product Overview

Intersil Corporation

Datasheet Details

Part number	JANSR2N7399
Manufacturer	Intersil Corporation
File Size	44.09 KB
Description	11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET
Datasheet	JANSR2N7399 Datasheet
Additional preview pages of the JANSR2N7399 datasheet.

Product details

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

11A, 100V, rDS(ON) = 0.210Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 1.5nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spe.

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Other Datasheets by Intersil Corporation

JANSR2N7395 - 8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7396 - 5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7397 - 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7398 - 2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7272 - 8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7275 - 5A/ 200V/ 0.500 Ohm/ Rad Hard/ N-Channel Power MOSFET

Published: Apr 7, 2005 |