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JANSR2N7397

4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET

JANSR2N7397 Datasheet (44.99 KB)

Preview of JANSR2N7397 PDF

Datasheet Details

Part number:

JANSR2N7397

Manufacturer:

Intersil Corporation

File Size:

44.99 KB

Description:

4a/ 250v/ 0.610 ohm/ rad hard/ n-channel power mosfet.

JANSR2N7397 Features

* 4A, 250V, rDS(ON) = 0.610Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Rat

JANSR2N7397 General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined.

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JANSR2N7397 250V 0.610 Ohm Rad Hard N-Channel Power MOSFET Intersil Corporation

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