JANSR2N7389 Datasheet - International Rectifier

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JANSR2N7389 Radiation Hardened Power MOSFET

RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39) PD-90882H IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630 RAD Hard™HEXFET ® TE.
IR HiRel RADHard™ HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

JANSR2N7389_InternationalRectifier.pdf

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Datasheet Details

Part number:

JANSR2N7389

Manufacturer:

International Rectifier

File Size:

1.13 MB

Description:

Radiation Hardened Power MOSFET

Features

* Single Event Effect (SEE) Hardened
* Low RDS(on)
* Low Total Gate Charge
* Proton Tolerant
* Simple Drive Requirements
* Hermetically Sealed
* Ceramic Package
* Light Weight
* ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Pa

Applications

* This technology has long history of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as D

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JANSR2N7389 Radiation Hardened Power MOSFET International Rectifier

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