* n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Avalanche Energy Rating Dynamic dv/dt Rating Simple Dr
JANSR2N7389 Datasheet (144.33 KB)
JANSR2N7389
International Rectifier
144.33 KB
Transistor p-channel(bvdss=-100v/ rds(on)=0.30ohm/ id=-6.5a).
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.882A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHF9130 JA.
📁 Related Datasheet
JANSR2N7390 RADIATION HARDENED POWER MOSFET (International Rectifier)
JANSR2N7390U RADIATION HARDENED POWER MOSFET (International Rectifier)
JANSR2N7391 N-CHANNEL MOSFET (International Rectifier)
JANSR2N7392 Radiation Hardened Power MOSFET (International Rectifier)
JANSR2N7395 8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7396 5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7397 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7398 2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7399 11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)
JANSR2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR (International Rectifier)
TAGS
Image Gallery
