JANSR2N7392

Radiation Hardened Power MOSFET

International Rectifier

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	Infineon Technologies AG	JANSR2N7392	Transistor MOSFET N-Channel 500V 18A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7392)	Avnet Americas	0	0	$0

JANSR2N7392 Datasheet (1.12 MB)

JANSR2N7392 Datasheet Preview — Preview of JANSR2N7392 PDF

Datasheet Details

Part number:

JANSR2N7392

Manufacturer:

International Rectifier

File Size:

1.12 MB

Description:

Radiation hardened power mosfet.
IRHM7460SE (JANSR2N7392) Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) 500V, 18A, N-channel, Rad Hard HEXFET™ Technology PD-91394G .

JANSR2N7392 Features

* Single event effect (SEE) hardened

* Ultra Low RDS(on)

* Low total gate charge

* Simple drive requirements

* Hermetically sealed

* Electrically isolated

* Ceramic eyelets

* Light weight

* ESD rating: Class 3B per MIL-STD-750,

JANSR2N7392 General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combin.

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