JANSR2N7391 - N-CHANNEL MOSFET
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) PD-91224E IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard™ HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM7360SE 100K Rads (Si) 0.20Ω ID QPL Part Number 22A JANSR2N7391 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
JANSR2N7391 Features
* n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter Units
