JANSR2N7391 Datasheet - International Rectifier

JANSR2N7391 N-CHANNEL MOSFET

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) PD-91224E IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard™ HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM7360SE 100K Rads (Si) 0.20Ω ID QPL Part Number 22A JANSR2N7391 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications..

JANSR2N7391 Features

* n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter Units

JANSR2N7391 Datasheet (166.61 KB)

JANSR2N7391 Datasheet Preview — Preview of JANSR2N7391 PDF

Datasheet Details

Part number:

JANSR2N7391

Manufacturer:

International Rectifier

File Size:

166.61 KB

Description:

N-channel mosfet.

📁 Related Datasheet

JANSR2N7390 RADIATION HARDENED POWER MOSFET (International Rectifier)

JANSR2N7390U RADIATION HARDENED POWER MOSFET (International Rectifier)

JANSR2N7392 Radiation Hardened Power MOSFET (International Rectifier)

JANSR2N7395 8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)

JANSR2N7396 5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)

JANSR2N7397 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)

JANSR2N7398 2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)

JANSR2N7399 11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET (Intersil Corporation)

TAGS

JANSR2N7391 N-CHANNEL MOSFET International Rectifier

JANSR2N7391 Distributor