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RFD16N02LSM N-Channel Power MOSFET

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Description

RFD16N02L, RFD16N02LSM May 1997 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET .
The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process.

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Datasheet Specifications

Part number
RFD16N02LSM
Manufacturer
Intersil Corporation
File Size
74.61 KB
Datasheet
RFD16N02LSM_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

Features

* 16A, 20V
* rDS(ON) = 0.022Ω
* Temperature Compensating PSPICE Model
* Can be Driven Directly from CMOS, NMOS, and TTL Circuits
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* 175oC Operating Temperature Ordering Information PART NUM

Applications

* such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level

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