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RFD16N03L - Enhancement-Mode Power MOSFET

RFD16N03L Description

SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs .
The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process.

RFD16N03L Features

* Packaging
* 16A, 30V
* rDS(ON) = 0.022Ω
* Temperature Compensating PSPICE Model
* Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE
* Peak Current vs Pulse Width Curve
* UIS Rating Curve

RFD16N03L Applications

* such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range,

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Datasheet Details

Part number
RFD16N03L
Manufacturer
Harris
File Size
130.03 KB
Datasheet
RFD16N03L-Harris.pdf
Description
Enhancement-Mode Power MOSFET

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Enhancement-Mode Power MOSFET Harris
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