RFD16N03L Enhancement-Mode Power MOSFET

Harris

Description

SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs .
The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process.

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Datasheet Specifications

Part number: RFD16N03L
Manufacturer: Harris
File Size: 130.03 KB
Datasheet: RFD16N03L-Harris.pdf
Description: Enhancement-Mode Power MOSFET

Features

* Packaging
* 16A, 30V
* rDS(ON) = 0.022Ω
* Temperature Compensating PSPICE Model
* Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE
* Peak Current vs Pulse Width Curve
* UIS Rating Curve

Applications

* such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range,

RFD16N03L Distributors

📁 Related Datasheet

RFD16N03 RFD16N02 RFD16N02L RFD16N02LSM RFD16N05 RFD16N05L

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