RFD16N03LSM Description
SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs .
The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process.
RFD16N03LSM Features
* Packaging
* 16A, 30V
* rDS(ON) = 0.022Ω
* Temperature Compensating PSPICE Model
* Can be Driven Directly from CMOS, NMOS, and TTL Circuits
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE DRAIN GATE
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
RFD16N03LSM Applications
* such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range,
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