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RFM7N35

N-Channel Power MOSFET

RFM7N35 Features

* 7A, 350V and 400V

* rDS(ON) = 0.75Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Guidelines for Solde

RFM7N35 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These typ.

RFM7N35 Datasheet (47.43 KB)

Preview of RFM7N35 PDF

Datasheet Details

Part number:

RFM7N35

Manufacturer:

Intersil Corporation

File Size:

47.43 KB

Description:

N-channel power mosfet.

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RFM7N35 N-Channel Power MOSFET Intersil Corporation

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