Datasheet4U Logo Datasheet4U.com

RFM7N35 - N-Channel Power MOSFET

RFM7N35 Product details

Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power..

Features

  • 7A, 350V and 400V.
  • rDS(ON) = 0.75Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART.

📥 Download Datasheet

Preview of RFM7N35 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RFM7N35
Manufacturer
Intersil Corporation
File Size
47.43 KB
Datasheet
RFM7N35_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

📁 Related Datasheet

  • RFM70 - Low Power High Performance 2.4 GHz GFSK Transceiver (Hoperf)
  • RFM73 - Low Power High Performance 2.4 GHz GFSK Transceiver (HOPERF)
  • RFM73P-S2 - Low Power High Performance 2.4 GHz GFSK Transceiver Module (HOPERF)
  • RFM75 - Low Power High Performance 2.4 GHz GFSK Transceiver (Hoperf)
  • RFM75C - Low Power High Performance 2.4 GHz GFSK Transceiver (Hoperf)
  • RFM-0505S - DC/DC Converter (RECOM)
  • RFM-07088 - One Chip FM Receiver (RF)
  • RFM01 - ISM Band FSK Receiver Module (Hope RF)

📌 All Tags

N-Channel Power MOSFET Intersil Corporation
Intersil Corporation RFM7N35-like datasheet

RFM7N35 Stock/Price