RFP12N10L Datasheet - Intersil Corporation

RFP12N10L N-Channel Power MOSFET

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RFP12N10L Data Sheet July 1999 File Number 1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors speciﬁcally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby.

RFP12N10L Features

* 12A, 100V

* rDS(ON) = 0.200Ω

* Design Optimized for 5V Gate Drives

* Can be Driven Directly from QMOS, NMOS, TTL Circuits

* Compatible with Automotive Drive Requirements

* SOA is Power-Dissipation Limited

* Nanosecond Switching Speeds

RFP12N10L Datasheet (38.43 KB)

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Datasheet Details

Part number:

RFP12N10L

Manufacturer:

Intersil Corporation

File Size:

38.43 KB

Description:

N-channel power mosfet.

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