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RFP12N18 Datasheet - Intersil Corporation

RFP12N18, N-Channel Power MOSFET

Semiconductor RFM12N18, RFM12N20, RFP12N18, RFP12N20 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching conv.
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RFP12N18_IntersilCorporation.pdf

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Datasheet Details

Part number:

RFP12N18

Manufacturer:

Intersil Corporation

File Size:

35.64 KB

Description:

N-Channel Power MOSFET

Features

* 12A, 180V and 200V
* rDS(ON) = 0.250Ω
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09293. BRAND RFM12N18

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