RFP12P08 Datasheet (Intersil Corporation)

RFP12P08, P-Channel Power MOSFET

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RFP12P08, RFP12P10 Data Sheet June 1999 File Number 1495.2 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated circuits.

Formerly d

RFP12P08 Features

* 12A, 80V and 100V

* rDS(ON) = 0.300Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Guidelines for Sold