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FSJ260D N-Channel Power MOSFETs

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Description

FSJ260D, FSJ260R June 1998 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.

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Datasheet Specifications

Part number
FSJ260D
Manufacturer
Intersil
File Size
46.02 KB
Datasheet
FSJ260D-Intersil.pdf
Description
N-Channel Power MOSFETs

Features

* 44A, 200V, rDS(ON) = 0.050Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra

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