FSJ9055D 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

Intersil Corporation

Description

Semiconductor FSJ9055D, FSJ9055R 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs .
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and m.

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Datasheet Specifications

Part number: FSJ9055D
Manufacturer: Intersil Corporation
File Size: 66.24 KB
Datasheet: FSJ9055D_IntersilCorporation.pdf
Description: 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

Features

* 55A, -60V, rDS(ON) = 0.029Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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FSJ9055D 55A -60V 0.029 Ohm Rad Hard SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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