FSJ9055D Datasheet - Intersil Corporation

55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

FSJ9055D Features

* 55A, -60V, rDS(ON) = 0.029Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Ra

FSJ9055D General Description

The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined .

FSJ9055D Datasheet (66.24 KB)

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FSJ9055D

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Intersil Corporation

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66.24 KB

Description:

55a/ -60v/ 0.029 ohm/ rad hard/ segr resistant/ p-channel power mosfets.

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FSJ9055D 55A -60V 0.029 Ohm Rad Hard SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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FSJ9055D Features

FSJ9055D General Description

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