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FSJ9055D Datasheet - Intersil Corporation

FSJ9055D 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined .

FSJ9055D Features

* 55A, -60V, rDS(ON) = 0.029Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Ra

FSJ9055D_IntersilCorporation.pdf

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Datasheet Details

Part number:

FSJ9055D

Manufacturer:

Intersil Corporation

File Size:

66.24 KB

Description:

55a/ -60v/ 0.029 ohm/ rad hard/ segr resistant/ p-channel power mosfets.

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FSJ9055D FSJ9055D 55A -60V 0.029 Ohm Rad Hard SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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