Description
FSJ260D, FSJ260R June 1998 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.
Features
* 44A, 200V, rDS(ON) = 0.050Ω
* Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event
- Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra
