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FSJ9260D

27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

FSJ9260D Features

* 27A, -200V, rDS(ON) = 0.130Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose R

FSJ9260D General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined.

FSJ9260D Datasheet (46.83 KB)

Preview of FSJ9260D PDF

Datasheet Details

Part number:

FSJ9260D

Manufacturer:

Intersil Corporation

File Size:

46.83 KB

Description:

27a/ -200v/ 0.130 ohm/ rad hard/ segr resistant/ p-channel power mosfets.

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TAGS

FSJ9260D 27A -200V 0.130 Ohm Rad Hard SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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