FSJ9160D P-Channel Power MOSFETs

Intersil

Description

June 1998 FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for c.

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Datasheet Specifications

Part number: FSJ9160D
Manufacturer: Intersil
File Size: 45.96 KB
Datasheet: FSJ9160D-Intersil.pdf
Description: P-Channel Power MOSFETs

Features

* 44A, -100V, rDS(ON) = 0.055Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose R

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FSJ9160D P-Channel Power MOSFETs Intersil

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