ISL73041SEH Datasheet - Intersil

ISL73041SEH Radiation Hardened 12V Half-Bridge GaN FET Driver

ISL73041SEH Radiation Hardened 12V Half-Bridge GaN FET Driver Datasheet The ISL73041SEH is a Radiation Hardened PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON) Gallium Nitride FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver. The ISL73041SEH can interface directly to the ISL73847SEH dual-phase PWM buck controller to .

ISL73041SEH Features

* ▪ Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU)

* All screening and QCI is in accordance with MIL-PRF-38535L Class-V ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input control ▪ Se

ISL73041SEH Datasheet (1.55 MB)