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ISL73020SEH, ISL70020SEH - 65A Enhancement Mode GaN Power Transistors

ISL73020SEH Description

Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transistors The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mod.

ISL73020SEH Features

* Very low rDS(ON) 3.5mĪ© (typical)
* Ultra low total gate charge 19nC (typical)
* ISL70020SEH radiation acceptance testing ā—‹ High dose rate (50-300rad(Si)/s): 100krad(Si) ā—‹ Low dose rate (0.01rad(Si)/s): 75krad(Si)
* ISL73020SEH radiation acceptance testing ā—‹ Low dose

ISL73020SEH Applications

* for these devices include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ISL73020SEH, ISL70020SEH. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ISL73020SEH, ISL70020SEH
Manufacturer
Intersil
File Size
517.44 KB
Datasheet
ISL70020SEH-Intersil.pdf
Description
65A Enhancement Mode GaN Power Transistors
Note
This datasheet PDF includes multiple part numbers: ISL73020SEH, ISL70020SEH.
Please refer to the document for exact specifications by model.

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65A Enhancement Mode GaN Power Transistors Intersil
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