Description
Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transistors The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mod.
Features
* Very low rDS(ON) 3.5mΩ (typical)
* Ultra low total gate charge 19nC (typical)
* ISL70020SEH radiation acceptance testing
○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si)
* ISL73020SEH radiation acceptance testing ○ Low dose
Applications
* for these devices include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero
