ISL73023SEH, ISL70023SEH Datasheet - Intersil

ISL73023SEH - 60A Enhancement Mode GaN Power Transistor

ISL70023SEH, ISL73023SEH 100V, 60A Enhancement Mode GaN Power Transistor Datasheet The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. The GaN’s exceptionally high electron mobility and low temperature coefficient allows for .

ISL73023SEH Features

* ▪ Very low rDS(ON) 5mΩ (typical) ▪ Ultra low total gate charge 14nC (typical) ▪ SEE hardness (see SEE report for details)

* SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV

* cm2/mg(Si) ▪ ISL70023SEH radiation accepting testing

* High dose rate (50-300rad(Si)/s): 100krad(Si)

ISL70023SEH-Intersil.pdf