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ISL73023SEH, ISL70023SEH - 60A Enhancement Mode GaN Power Transistor

ISL73023SEH Description

ISL70023SEH, ISL73023SEH 100V, 60A Enhancement Mode GaN Power Transistor Datasheet The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mo.
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ISL73023SEH Features

* ▪ Very low rDS(ON) 5mΩ (typical) ▪ Ultra low total gate charge 14nC (typical) ▪ SEE hardness (see SEE report for details)
* SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV
* cm2/mg(Si) ▪ ISL70023SEH radiation accepting testing
* High dose rate (50-300rad(Si)/s): 100krad(Si)

ISL73023SEH Applications

* for these devices include commercial aerospace, medical, and nuclear power generation. The GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ISL73023SEH, ISL70023SEH. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ISL73023SEH, ISL70023SEH
Manufacturer
Intersil
File Size
522.12 KB
Datasheet
ISL70023SEH-Intersil.pdf
Description
60A Enhancement Mode GaN Power Transistor
Note
This datasheet PDF includes multiple part numbers: ISL73023SEH, ISL70023SEH.
Please refer to the document for exact specifications by model.

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60A Enhancement Mode GaN Power Transistor Intersil
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