ISL73023SEH Datasheet, Transistor, Intersil

ISL73023SEH Features

• Transistor ▪ Very low rDS(ON) 5mΩ (typical) ▪ Ultra low total gate charge 14nC (typical) ▪ SEE hardness (see SEE report for details)
• SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV
• c

PDF File Details

Part number:

ISL73023SEH

Manufacturer:

Intersil

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522.12kb

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📄 Datasheet

Description:

60a enhancement mode gan power transistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

ISL73023SEH Application

• Applications for these devices include commercial aerospace, medical, and nuclear power generation. The GaN’s exceptionally high electron mobility a

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