Datasheet4U Logo Datasheet4U.com

ISL73024SEH, ISL70024SEH 7.5A Enhancement Mode GaN Power Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement m.
4 3.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ISL73024SEH, ISL70024SEH. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
ISL73024SEH, ISL70024SEH
Manufacturer
Intersil
File Size
471.91 KB
Datasheet
ISL70024SEH-Intersil.pdf
Description
7.5A Enhancement Mode GaN Power Transistor
Note
This datasheet PDF includes multiple part numbers: ISL73024SEH, ISL70024SEH.
Please refer to the document for exact specifications by model.

Features

* ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details)
* SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV
* cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report)
* High dose rate (50-300rad(Si)/s): 100krad

Applications

* for these devices include commercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR.

ISL73024SEH Distributors

📁 Related Datasheet

📌 All Tags

Intersil ISL73024SEH-like datasheet