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ISL73024SEH, ISL70024SEH - 7.5A Enhancement Mode GaN Power Transistor

ISL73024SEH Description

ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement m.
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ISL73024SEH Features

* ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details)
* SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV
* cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report)
* High dose rate (50-300rad(Si)/s): 100krad

ISL73024SEH Applications

* for these devices include commercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ISL73024SEH, ISL70024SEH. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ISL73024SEH, ISL70024SEH
Manufacturer
Intersil
File Size
471.91 KB
Datasheet
ISL70024SEH-Intersil.pdf
Description
7.5A Enhancement Mode GaN Power Transistor
Note
This datasheet PDF includes multiple part numbers: ISL73024SEH, ISL70024SEH.
Please refer to the document for exact specifications by model.

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7.5A Enhancement Mode GaN Power Transistor Intersil
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