ISL73024SEH, ISL70024SEH Datasheet - Intersil

ISL73024SEH - 7.5A Enhancement Mode GaN Power Transistor

ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron mobility and low temperature coefficient allows for ver.

ISL73024SEH Features

* ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details)

* SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV

* cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report)

* High dose rate (50-300rad(Si)/s): 100krad

ISL70024SEH-Intersil.pdf