ISL73024SEH

7.5A Enhancement Mode GaN Power Transistor

Intersil

ISL73024SEH Features

* ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details)

* SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV

* cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report)

* High dose rate (50-300rad(Si)/s): 100krad

ISL73024SEH General Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.1 A.

ISL73024SEH Datasheet (471.91 KB)

ISL73024SEH Datasheet Preview — Preview of ISL73024SEH PDF

Datasheet Details

Part number:

ISL73024SEH

Manufacturer:

Intersil

File Size:

471.91 KB

Description:

7.5a enhancement mode gan power transistor.
ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement m.

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ISL73024SEH 7.5A Enhancement Mode GaN Power Transistor Intersil

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ISL73024SEH Features

ISL73024SEH General Description

Datasheet Details

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Description:

ISL73024SEH Distributor