Datasheet Details
- Part number
- FSYA150R
- Manufacturer
- Intersil Corporation
- File Size
- 57.55 KB
- Datasheet
- FSYA150R_IntersilCorporation.pdf
- Description
- Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYA150R Description
FSYA150D, FSYA150R Data Sheet January 1999 File Number 4648 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operatio.
FSYA150R Features
* 39A, 100V, rDS(ON) = 0.055Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra
FSYA150R Applications
* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica
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