Datasheet4U Logo Datasheet4U.com

IRF121 - N-Channel Power MOSFET

IRF121 Description

Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

IRF121 Features

* 8.0A and 9.2A, 80V and 100V
* rDS(ON) = 0.27Ω and 0.36Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “

IRF121 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. October 1997

📥 Download Datasheet

Preview of IRF121 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRF121
Manufacturer
Intersil Corporation
File Size
68.22 KB
Datasheet
IRF121_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

📁 Related Datasheet

  • IRF120 - N-CHANNEL POWER MOSFET (Samsung semiconductor)
  • IRF1205 - HEXFET Power MOSFET (International Rectifier)
  • IRF122 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF123 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF100 - HIGH POWER WIRE WOUND RESISTORS (ETC)
  • IRF100B201 - Power MOSFET (International Rectifier)
  • IRF100B202 - Power MOSFET (International Rectifier)
  • IRF100P218 - MOSFET (Infineon)

📌 All Tags

N-Channel Power MOSFET Intersil Corporation
Intersil Corporation IRF121-like datasheet

IRF121 Stock/Price