ASDX100 Datasheet, Ict, Invensys

ASDX100 Features

• Ict
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 65 mΩ
• Ultra Low Gate Charge (Typ. Qg = 165 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF)

PDF File Details

Part number:

ASDX100

Manufacturer:

Invensys

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104.43kb

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📄 Datasheet

Description:

0 to 1 psi through 0 to 100 psi pressure transducers sensym ict. SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge ba

ASDX100 Application

• Applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized bod

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