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MJD112 NPN Transistor

MJD112 Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD112 TRANSISTOR (NPN) y.

MJD112 Applications

* TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 2A PC Collector Power Dissipatio

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Datasheet Details

Part number
MJD112
Manufacturer
JCET
File Size
520.10 KB
Datasheet
MJD112-JCET.pdf
Description
NPN Transistor

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JCET MJD112-like datasheet