WPM3401 - P-Channel Enhancement Mode MOSFET
The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebo
WPM3401 Features
* z z z z z -30V/-4.3A,RDS(ON)< 65m@VGS=- 10V -30V/-3.4A,RDS(ON)< 90m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT23 package design P
* Channel MOSFET G 1 3 D S 2 Top View Application z z z z z Power
