WPM3022
WillSEMI
806.37kb
Mosfet. The WPM3022 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RD
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📁 Related Datasheet
WPM3021 - MOSFET
(WillSEMI)
WPM3021
Single P-Channel, -30V, -11.5A, Power MOSFET
VDS (V) -30
Typical RDS(on) (mΩ)
11@ VGS=-10V 15@VGS=-5V
Descriptions
The WPM3021 is P-Channel.
WPM3023 - MOSFET
(WillSEMI)
WPM3023
Single P-Channel, -30V, -3.9A, Power MOSFET
VDS (V) -30
Typical RDS(on) (mΩ)
37 @ VGS=-10V 50 @ VGS=-4.5V
WPM3023
Http://.sh-willsemi.co.
WPM3004 - MOSFET
(WillSEMI)
WPM3004
Single P-Channel, -30V, -5.0A, Power MOSFET
VDS (V) -30
Rds(on) (ȍ) 0.053@ VGS=̢10.0V 0.053@ VGS=̢10.0V 0.079@ VGS=̢4.5V 0.079@ VGS=̢4.5V
.
WPM3005 - MOSFET
(WillSEMI)
WPM3005
Single P-Channel, -30V, -4.1A, Power MOSFET
WPM3005
Http://.sh-willsemi.
VDS (V) -30
Rds(on) (ȍ) 0.057@ VGS=̢10.0V 0.057@ VGS=̢10.0V .
WPM3012 - MOSFET
(WillSEMI)
WPM3012
Single P-Channel, -30V, -3.1A, Power MOSFET
VDS (V) -30
Rds(on) (ȍ) 0.058@ VGS= 10V 0.080@ VGS= 4.5V
Descriptions
The WPM3012 is P-Channel.
WPM3015 - MOSFET
(WillSEMI)
WPM3015
Single P-Channel, -30V, -3.1A, Power MOSFET
VDS (V) -30
Typical Rds(on)(Ω ) 0.063@ VGS=-10V 0.091@ VGS=-4.5V
WPM3015
.sh-willsemi.
D.
WPM3401 - MOSFET
(WillSEMI)
WPM3401
Single P-Channel, -30V, -4.6A, Power MOSFET
VDS (V) -30
Max RDS (on) (mΩ) 53@ VGS=-10V 56@ VGS=-4.5V
WPM3401
.sh-willsemi.
Descript.
WPM3401 - P-Channel Enhancement Mode MOSFET
(JESTEK)
WPM3401
WPM3401
P-Channel Enhancement Mode MOSFET
http://.jestek..cn
Description
The WPM3401 is the P-Channel logic enhancement mode power fie.
WPM3407 - Single P-Channel Power MOSFET
(WillSEMI)
WPM3407
Single P-Channel, -30 V, -4.4A,Power MOSFET
Description
The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate.
WPM04-2045A - 4Watts POWER AMPLIFIER
(WanTcom)
WPM04-2045A
400- 465 MHz 4 Watts POWER AMPLIFIER
REV B
December, 2020
Key Features
Product Description
Applications
400 ~ 465 MHz 5.0 dB Nois.
