Part number:
MJE3055
Manufacturer:
JIANGSU CHANGJIANG ELECTRONICS
File Size:
25.78 KB
Description:
Npn transistor.
MJE3055-JIANGSUCHANGJIANGELECTRONICS.pdf
Datasheet Details
MJE3055 Features
* Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 Collector-base voltage A V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-220 1. BASE 2. COLLECTOR 3. EMITTER 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Par
MJE3055-JIANGSUCHANGJIANGELECTRONICS.pdf
Datasheet Details
MJE3055
JIANGSU CHANGJIANG ELECTRONICS
25.78 KB
Npn transistor.
📁 Related Datasheet
MJE3055 NPN SILICON POWER TRANSISTOR (DIGITRON)
MJE3055 NPN Transistor (INCHANGE)
MJE3055 NPN Silicon Transistor (Fairchild)
MJE3055 COMPLEMENTARY SILICON POWER TRANSISTORS (ST Microelectronics)
MJE3055 COMPLEMENTARY SILICON POWER TRANSISTORS (ON)
MJE3055 Plastic-Encapsulate Transistors (GME)
MJE3055 (MJE2955 / MJE3055) POWER TRANSISTORS (Motorola)
MJE3055A Complementary Silicon power transistors (nELL)
MJE3055 Distributor