3DD5040 Datasheet - JILIN SINO-MICROELECTRONICS

3DD5040 CASE-RATED BIPOLAR TRANSISTOR

of Changes www.DataSheet4U.com 2009-11-3 °æ±¾£º 200911E 6/6 .

R µÍÆ Å´ó¹Ü¿Ç¶î¨ÄË«¼ÐÍ¾ Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY 3DD5040 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃÍ¾ z ý×Ö¡¢Ê ÐÊä³öµçÂ ¸ßÇå²ÊÉ«µçÊÓ»ú MAIN CHARACTERISTICS 1700 22 3 0.3 V A V(max) ¦Ì s(max) â×° Package TO-3P(H)IS APPLICATIONS z Horizontal deflection output for HDTV 1 2 3 ²úÆ ÌØÐÔ z 3DD5040 ÊÇ ¸ß ´Ñ¹ó¦ÂÊ¾ ÌåÜ£¬ ÔìÖÐ²ÉÓÃµÄÖ÷Òª¹¤ÒÕ¼ ÊõÓÐ£º¸ßÑ¹Ì¨Ãæ¹¤ÒÕ¼ Êõ¡¢ÈýÖØÀ©É¼µ ÓÃËÜÁÏÈ«°ü â½á¹¡£ £¨ RoHS£Æ ¡£©²ú NPN Ë«¼ÐÍ ÖÆ FEATUR.

3DD5040 Features

* z 3DD5040 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, µÈÐ

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* EQUIVALENT CIRCUIT ,²É »

* ±£ triple diffused process etc., adoption of fully plastic packge. RoHS product. ¶©»õÐÅÏ¢ ¶© »õ ÐÍ ORDER MESSAGE ºÅ Ó¡ ¼Ç

3DD5040_JILINSINOMICROELECTRONICS.pdf