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SPE04M60T-C Datasheet - JILIN SINO

IPM

SPE04M60T-C Features

* ，

* Signal high level valid, 3.3V 5V compatible with 3.3v and MCU 5V MCU

* MOSFET

* Lower arm MOSFET source electrode output

* Built-in bootstrap diode

* Built-in straight through protection

* Built-in undervoltage protection

SPE04M60T-C General Description

1 COM GND IC Common Supply Ground 2 VB(U) U Bias Voltage for U-Phase High-Side MOSFET Driving 3 VCC(U) U Bias Voltage for U-Phase IC and Low-Side MOSFET Driving 4 IN(UH) U Signal Input for U-Phase High-Side 5 IN(UL) U Signal Input for U-Phase Low-Side 6 NC No Connection 7 VB(V) .

SPE04M60T-C Datasheet (803.63 KB)

Preview of SPE04M60T-C PDF

Datasheet Details

Part number:

SPE04M60T-C

Manufacturer:

JILIN SINO

File Size:

803.63 KB

Description:

Ipm.
(IPM) Intelligent Power Module SPE04M60T-A/C MAIN CHARACTERISTICS 600V/4A 3 VDSS 600V ID 2A IDM 4A VISO 1500V .

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TAGS

SPE04M60T-C IPM JILIN SINO

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